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	Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source
	FLOYD, PHILIP D.
	2001-05-29
著作权人	XEROX CORPORATION
专利号	US6238944
国家	美国
文献子类	授权发明
其他题名	Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source
英文摘要	The barrier layers within a quantum well active region of a vertical cavity surface emitting laser can be silicon doped. Under thermal annealing, the silicon doped barrier layers will form disordered regions of the quantum well active region around the remaining non-disordered regions of the quantum well active region. The disordered regions of the quantum well active region will prevent diffusion of injected carriers from the non-disordered, light emitting quantum well active region.
公开日期	2001-05-29
申请日期	1999-12-21
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47477]
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	FLOYD, PHILIP D.. Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source. US6238944. 2001-05-29.

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