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	Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications
	HUI, RONGQING; JIANG, HONG-XING; LIN, JING-YU
	2008-03-18
著作权人	KANSAS, UNIVERSITY OF
专利号	US7345812
国家	美国
文献子类	授权发明
其他题名	Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications
英文摘要	The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.
公开日期	2008-03-18
申请日期	2004-02-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47453]
专题	半导体激光器专利数据库
作者单位	KANSAS, UNIVERSITY OF
推荐引用方式 GB/T 7714	HUI, RONGQING,JIANG, HONG-XING,LIN, JING-YU. Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications. US7345812. 2008-03-18.

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