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	Method for making a field effect transistor integrated with an opto-electronic device
	KINOSHITA, JUN'ICHI; SUZUKI, NOBUO; MORINAGA, MOTOYASU; HIRAYAMA, YUZO; NAKAMURA, MASARU
	1991-06-04
著作权人	KABUSHIKI KAISHA TOSHIBA
专利号	US5021361
国家	美国
文献子类	授权发明
其他题名	Method for making a field effect transistor integrated with an opto-electronic device
英文摘要	In a monolithic OEIC in which an FET and a light-emitting device are integrated, the light-emitting device has a first clad layer, an active layer, and a second clad layer stacked on a substrate, the FET has a channel layer and source and drain layers with a high impurity concentration stacked on the substrate, etching mask layers on the source and drain layers, and a gate electrode formed on a channel layer between source and drain electrodes and the source and drain layers, the first clad layer of the light-emitting diode and the source and drain layers with a high impurity concentration of the FET are formed of the same semiconductor layer, and an active layer of the light-emitting device and the etching mask layers of the FET are formed of the same semiconductor layer.
公开日期	1991-06-04
申请日期	1989-12-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47399]
专题	半导体激光器专利数据库
作者单位	KABUSHIKI KAISHA TOSHIBA
推荐引用方式 GB/T 7714	KINOSHITA, JUN'ICHI,SUZUKI, NOBUO,MORINAGA, MOTOYASU,et al. Method for making a field effect transistor integrated with an opto-electronic device. US5021361. 1991-06-04.

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