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	Semiconductor structure and devices and methods of making same
	DINKEL, NANCY A.; GOLDSTEIN, BERNARD; ETTENBERG, MICHAEL
	1989-06-27
著作权人	RCA CORPORATION
专利号	CA1256550A
国家	加拿大
文献子类	授权发明
其他题名	Semiconductor structure and devices and methods of making same
英文摘要	SEMICONDUCTOR STRUCTURE AND DEVICES AND METHODS OF MAKING SAME ABSTRACT OF THE DISCLOSURE Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel (14) in a surface (12) of a buffer layer (10) greater than about 4 micrometers thick on the substrate (4) and forming the clad layer (16) over the buffer layer (10) and the channel (14). CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.
公开日期	1989-06-27
申请日期	1985-10-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47369]
专题	半导体激光器专利数据库
作者单位	RCA CORPORATION
推荐引用方式 GB/T 7714	DINKEL, NANCY A.,GOLDSTEIN, BERNARD,ETTENBERG, MICHAEL. Semiconductor structure and devices and methods of making same. CA1256550A. 1989-06-27.

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