QQ客服 官方微博 反馈留言

	面発光半導体レーザ及びその製造方法
	上野 芳康
	1999-01-29
著作权人	日本電気株式会社
专利号	JP2880788B2
国家	日本
文献子类	授权发明
其他题名	面発光半導体レーザ及びその製造方法
英文摘要	PURPOSE:To make the element life of a surface emission semiconductor laser element long and to stably obtain a sufficiently high optical output by a method wherein the impurity concentration of an AlGaInP active layer and an AlGaInP clad layer is controlled. CONSTITUTION:A double heterostructure multilayer film which is composed of an n-type AlGaInP clad layer 3, an AlGaInP active layer 1 and a p-type AlGaInP clad layer 2 is formed on an n-type GaAs substrate 5 by an epitaxial growth method. Then, a disk-shaped or polygonal SiO2 dielectric film is formed; Zn is diffused to a crystal by a sealed-tube diffusion method by making use of the film as a mask, or an ion implantation method is used and a high- concentration impurity introduction region 4 is formed. Then, a p-type GaAs layer 8, electrodes 7 and dielectric multilayer-film reflecting films 6 are formed. Thereby, since injected carriers are confined in an active region according to a band-gap energy difference, an injection efficiency is enhanced, a sufficiently long element life is obtained and a sufficiently high optical output can stably be obtained.
公开日期	1999-04-12
申请日期	1990-11-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47363]
专题	半导体激光器专利数据库
作者单位	日本電気株式会社
推荐引用方式 GB/T 7714	上野 芳康. 面発光半導体レーザ及びその製造方法. JP2880788B2. 1999-01-29.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。