Metal organic vapor phase epitaxy method and method for manufacturing semiconductor laser device | |
KOUI, TOMOAKI | |
2001-10-09 | |
著作权人 | NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. |
专利号 | US6300153 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Metal organic vapor phase epitaxy method and method for manufacturing semiconductor laser device |
英文摘要 | First, a waveguide which lases in accordance with a predetermined voltage applied thereto is formed on a predetermined region on a substrate. An SiO2 mask is formed on a top of the waveguide. Then, a current-blocking layer of group III material and group V material for blocking a current is formed on the substrate and the waveguide except a top of the waveguide on which the SiO2 mask is formed. In this step, the group III material including group III elements and the group V material including group V elements in the current-blocking layer are supplied to the surface of the substrate. A migration length of the group III material on the surface is controlled by controlling at least one of the growth temperature of the current-blocking layer and the pressure of the supplied group V material. And a cladding layer is formed after the SiO2 mask is removed, on the waveguide and the current-blocking layer and a contact layer is formed on the cladding layer. And then, an electrode is formed on the contact layer and another electrode is formed on a surface of the substrate which is opposite to the surface on which the waveguide is formed, thus a semiconductor laser device is completed. |
公开日期 | 2001-10-09 |
申请日期 | 1999-09-15 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/47361] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. |
推荐引用方式 GB/T 7714 | KOUI, TOMOAKI. Metal organic vapor phase epitaxy method and method for manufacturing semiconductor laser device. US6300153. 2001-10-09. |
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