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	Metal organic vapor phase epitaxy method and method for manufacturing semiconductor laser device
	KOUI, TOMOAKI
	2001-10-09
著作权人	NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
专利号	US6300153
国家	美国
文献子类	授权发明
其他题名	Metal organic vapor phase epitaxy method and method for manufacturing semiconductor laser device
英文摘要	First, a waveguide which lases in accordance with a predetermined voltage applied thereto is formed on a predetermined region on a substrate. An SiO2 mask is formed on a top of the waveguide. Then, a current-blocking layer of group III material and group V material for blocking a current is formed on the substrate and the waveguide except a top of the waveguide on which the SiO2 mask is formed. In this step, the group III material including group III elements and the group V material including group V elements in the current-blocking layer are supplied to the surface of the substrate. A migration length of the group III material on the surface is controlled by controlling at least one of the growth temperature of the current-blocking layer and the pressure of the supplied group V material. And a cladding layer is formed after the SiO2 mask is removed, on the waveguide and the current-blocking layer and a contact layer is formed on the cladding layer. And then, an electrode is formed on the contact layer and another electrode is formed on a surface of the substrate which is opposite to the surface on which the waveguide is formed, thus a semiconductor laser device is completed.
公开日期	2001-10-09
申请日期	1999-09-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47361]
专题	半导体激光器专利数据库
作者单位	NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
推荐引用方式 GB/T 7714	KOUI, TOMOAKI. Metal organic vapor phase epitaxy method and method for manufacturing semiconductor laser device. US6300153. 2001-10-09.

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