Semiconductor photonic integrated circuit and fabrication process therefor | |
SASAKI, TATSUYA; TAKEUCHI, TAKESHI | |
1997-12-30 | |
著作权人 | VICHEM CORPORATION |
专利号 | US5703974 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor photonic integrated circuit and fabrication process therefor |
英文摘要 | On a surface of an n-InP substrate, a mask of SiO2 layer wide in an active region and narrow in a passive region and having a constant gap width. In a waveguide region defined between the masks, a waveguide structure constituted of an n-InGaAsP guide layer, an undoped InGaAsP optical waveguide layer and a p-InP clad layer is selectively grown to form. Again, utilizing SiO2 layer, a mask is formed on the surface of the p-InP layer in the active region and a pair of masks defining the waveguide structure is formed in a the passive region, and high resistance InP layer is grown. Also, in the active region, a p-InP layer, a p-InGaAs contact layer are selectively grown. By forming SiO2, a window is formed to form p-side electrode. An n-type electrode is formed on the back surface of the substrate, By this, a device having an optical loss in the active region and passive region becomes low, a coupling coefficient between both regions is high. Also, an element capacitance can become small to enable high speed operation. |
公开日期 | 1997-12-30 |
申请日期 | 1996-07-12 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/47354] |
专题 | 半导体激光器专利数据库 |
作者单位 | VICHEM CORPORATION |
推荐引用方式 GB/T 7714 | SASAKI, TATSUYA,TAKEUCHI, TAKESHI. Semiconductor photonic integrated circuit and fabrication process therefor. US5703974. 1997-12-30. |
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