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	Semiconductor laser devices and methods of making same
	MORIMOTO, TAIJI; YAMAGUCHI, MASAHIRO; KANEIWA, SHINJI; HAYASHI, HIROSHI; KAWANISHI, HIDENORI
	1994-02-02
著作权人	SHARP KABUSHIKI KAISHA
专利号	EP0298778B1
国家	欧洲专利局
文献子类	授权发明
其他题名	Semiconductor laser devices and methods of making same
英文摘要	A semiconductor laser device comprising an active layer (12, 32) that constitutes a laser-oscillating resonator, and an inner-striped channel (3, 4) in the resonating direction, light from the active layer (12, 32) being absorbed at both edges of the striped channel (3, 4), resulting in an optical waveguide within the active layer (12, 32), wherein the amount of light to be absorbed at both edges of the striped channel (3, 4) in the vicinity of at least one of the light-emitting facets (1a,1b) is smaller than that to be absorbed at both edges of the striped channel (3, 4) inside of the light-emitting facets (1a, 1b).
公开日期	1994-02-02
申请日期	1988-07-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47348]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	MORIMOTO, TAIJI,YAMAGUCHI, MASAHIRO,KANEIWA, SHINJI,et al. Semiconductor laser devices and methods of making same. EP0298778B1. 1994-02-02.

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