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	Process for producing a resonator in a semiconductor laser device
	WATANABE, YOSHIAKI; MIYAGUCHI, SATOSHI; AMANO, HIROSHI; AKASAKI, ISAMU
	1998-10-20
著作权人	PIONEER ELECTRIC CORPORATION
专利号	US5825789
国家	美国
文献子类	授权发明
其他题名	Process for producing a resonator in a semiconductor laser device
英文摘要	A method for forming a resonator in a semiconductor laser device comprises the steps of; filling with a resin a gap surrounding the side surfaces of the waveguide for a resonator other than the end-surface to be polished; polishing the end-surface and the resin surrounding it; forming a predetermined optical coating on the polished end-surface and the resin in the state of the laser waveguide and the electrode being embedded; and removing the embedding resin. Both the bending of polished end-surfaces and the entering of the thin film into the side surface of the laser waveguide is prevented so that a high smooth end-surface of mirror coating for resonator is achieved. Furthermore, any crystals are used for a substrate carrying a semiconductor laser structure with a resonator even if that crystal is of non-cleavage, according to that method.
公开日期	1998-10-20
申请日期	1995-12-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47264]
专题	半导体激光器专利数据库
作者单位	PIONEER ELECTRIC CORPORATION
推荐引用方式 GB/T 7714	WATANABE, YOSHIAKI,MIYAGUCHI, SATOSHI,AMANO, HIROSHI,et al. Process for producing a resonator in a semiconductor laser device. US5825789. 1998-10-20.

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