Method for the production of semiconductor devices | |
TANEYA, MOTOTAKA; MATSUI, SADAYOSHI; MATSUMOTO, MITSUHIRO | |
1987-12-29 | |
著作权人 | SHARP KABUSHIKI KAISHA |
专利号 | US4716129 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Method for the production of semiconductor devices |
英文摘要 | A method for the production of semiconductor devices, using liquid phase epitaxy of semiconductors of Groups III to V of the periodic table, in which on a Te-doped first layer, a second layer having a polarity different from that of the first layer is grown, wherein a non-Te-doped third layer having the same polarity as the first layer is grown between the first layer and the second layer. Another method in which on a Te-doped first layer, a second layer having a principal crystal composition different from that of the first layer is grown, wherein a non-Te-doped third layer having the same principal crystal composition of the first layer is grown between the first layer and the second layer. |
公开日期 | 1987-12-29 |
申请日期 | 1986-01-06 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/47250] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | TANEYA, MOTOTAKA,MATSUI, SADAYOSHI,MATSUMOTO, MITSUHIRO. Method for the production of semiconductor devices. US4716129. 1987-12-29. |
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