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	Method for the production of semiconductor devices
	TANEYA, MOTOTAKA; MATSUI, SADAYOSHI; MATSUMOTO, MITSUHIRO
	1987-12-29
著作权人	SHARP KABUSHIKI KAISHA
专利号	US4716129
国家	美国
文献子类	授权发明
其他题名	Method for the production of semiconductor devices
英文摘要	A method for the production of semiconductor devices, using liquid phase epitaxy of semiconductors of Groups III to V of the periodic table, in which on a Te-doped first layer, a second layer having a polarity different from that of the first layer is grown, wherein a non-Te-doped third layer having the same polarity as the first layer is grown between the first layer and the second layer. Another method in which on a Te-doped first layer, a second layer having a principal crystal composition different from that of the first layer is grown, wherein a non-Te-doped third layer having the same principal crystal composition of the first layer is grown between the first layer and the second layer.
公开日期	1987-12-29
申请日期	1986-01-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47250]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	TANEYA, MOTOTAKA,MATSUI, SADAYOSHI,MATSUMOTO, MITSUHIRO. Method for the production of semiconductor devices. US4716129. 1987-12-29.

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