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	Method of making a compound semiconductor laser
	TURLEY, STEPHEN E. H.
	1985-01-29
著作权人	ITT INDUSTRIES INC 320 PARK AVE NY NY 10022 A CORP
专利号	US4496403
国家	美国
文献子类	授权发明
其他题名	Method of making a compound semiconductor laser
英文摘要	In the manufacture of an InP/(In,Ga) (As,P) buried rib laser, the sides of the laser are profiled to have surfaces extending in {111} A planes down to the junction between the active and lower confining layers, and to have surfaces extending in other planes beneath this junction. In the subsequent epitaxial regrowth nucleation above this junction between the surfaces is discriminated against in favor of growth beneath this junction so that the regrowth up the sides of the rib is automatically temporarily arrested in the vicinity of this junction.
公开日期	1985-01-29
申请日期	1982-11-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46215]
专题	半导体激光器专利数据库
作者单位	ITT INDUSTRIES INC 320 PARK AVE NY NY 10022 A CORP
推荐引用方式 GB/T 7714	TURLEY, STEPHEN E. H.. Method of making a compound semiconductor laser. US4496403. 1985-01-29.

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