QQ客服 官方微博 反馈留言

	Multiwavelength semiconductor laser array and method of fabricating the same
	LIN, KUO-JUI; CHI, TUNG-WEI; LIN, KUN-FENG; LAI, CHIH-MING
	2009-07-07
著作权人	INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
专利号	US7558301
国家	美国
文献子类	授权发明
其他题名	Multiwavelength semiconductor laser array and method of fabricating the same
英文摘要	A multiwavelength semiconductor laser array and a method of fabricating the same are provided. Laser resonators having stacked quantum dot active regions of different emission wavelengths are utilized together with a fabricating process to change the length of each laser resonator or that of an upper electrode layer to generate different laser oscillation conditions, such that each of the laser resonators generates a single-wavelength band laser in a specific quantum dot active region, thereby achieving a multiwavelength semiconductor laser array capable of generating multiple laser wavelengths.
公开日期	2009-07-07
申请日期	2007-05-15
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46205]
专题	半导体激光器专利数据库
作者单位	INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	LIN, KUO-JUI,CHI, TUNG-WEI,LIN, KUN-FENG,et al. Multiwavelength semiconductor laser array and method of fabricating the same. US7558301. 2009-07-07.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。