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	High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration
	TAYLOR, GEOFF W.
	2005-02-01
著作权人	UNIVERSITY OF CONNECTICUT, THE
专利号	US6849866
国家	美国
文献子类	授权发明
其他题名	High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration
英文摘要	A family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate by adding two sheets of planar doping together with a wideband cladding layer to the top of a pseudomorphic high electron mobility transistor (PHEMT) structure. The two sheets are of the same polarity which is opposite to the modulation doping of the PHEMT and they are separated by a lightly doped layer of specific thickness. The combination is separated from the PHEMT modulation doping by a specific thickness of undoped material. The charge sheets are thin and highly doped. The top charge sheet achieves low gate contact resistance and the bottom charge sheet defines the capacitance of the field-effect transistor (FET) with respect to the modulation doping layer of the PHEMT. The structure produces a pnp bipolar transistor, enhancement and depletion type FETs, a vertical cavity surface emitting laser, and a resonant cavity detector.
公开日期	2005-02-01
申请日期	2002-07-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46162]
专题	半导体激光器专利数据库
作者单位	UNIVERSITY OF CONNECTICUT, THE
推荐引用方式 GB/T 7714	TAYLOR, GEOFF W.. High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration. US6849866. 2005-02-01.

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