Optical semiconductor device and pumping light source for optical fiber amplifier
YOSHIDA, JUNJI; TSUKIJI, NAOKI; TANIGUCHI, HIDEHIRO; IRINO, SATOSHI; ITOH, HIROKAZU; IKEDA, HARUNOBU; KOBAYAKAWA, MASAKO; KASUKAWA, AKIHIKO
2013-02-26
著作权人FURUKAWA ELECTRIC CO., LTD
专利号US8385379
国家美国
文献子类授权发明
其他题名Optical semiconductor device and pumping light source for optical fiber amplifier
英文摘要A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.
公开日期2013-02-26
申请日期2010-01-07
状态授权
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/46140]  
专题半导体激光器专利数据库
作者单位FURUKAWA ELECTRIC CO., LTD
推荐引用方式
GB/T 7714
YOSHIDA, JUNJI,TSUKIJI, NAOKI,TANIGUCHI, HIDEHIRO,et al. Optical semiconductor device and pumping light source for optical fiber amplifier. US8385379. 2013-02-26.
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