QQ客服 官方微博 反馈留言

	Method for manufacturing of integrated DFB laser with coupled strip waveguide on a substrate
	AMANN, MARKUS-CHRISTIAN; MAHLEIN, HANS F.; STEGMUELLER, BERNHARD; THULKE, WOLFGANG; WINZER, GERHARD; WOLFF, ULRICH
	1987-04-07
著作权人	SIEMENS AKTIENGESELLSCHAFT
专利号	US4656636
国家	美国
文献子类	授权发明
其他题名	Method for manufacturing of integrated DFB laser with coupled strip waveguide on a substrate
英文摘要	A method for integrating a DFB laser and a passive strip waveguide on a substrate. A layer stack is produced in a first epitaxy step, the layer stack having a laser-active layer and a surface-wide grating on the uppermost layer, and eroding the stack area-wise, but only down to a layer under the laser-active layer, not down to the substrate, by means of etching to create a step separating the laser region from the passive strip waveguide region. By employing an etching stop layer, the etching can ensue self-adjustingly, and the coupling between the laser-active layer and the passive strip waveguide region occurs not by end coupling, but by surface coupling. Only two epitaxy steps are required for the complete manufacture of the structure, and a strip required for the definition of the laser and of the waveguide can be produced in the same single method step.
公开日期	1987-04-07
申请日期	1985-12-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46117]
专题	半导体激光器专利数据库
作者单位	SIEMENS AKTIENGESELLSCHAFT
推荐引用方式 GB/T 7714	AMANN, MARKUS-CHRISTIAN,MAHLEIN, HANS F.,STEGMUELLER, BERNHARD,et al. Method for manufacturing of integrated DFB laser with coupled strip waveguide on a substrate. US4656636. 1987-04-07.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。