Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes | |
BOUR, DAVID P.; KNEISSL, MICHAEL A.; ROMANO, LINDA T.; PAOLI, THOMAS L.; VAN DE WALLE, CHRISTIAN G. | |
2003-05-20 | |
著作权人 | XEROX CORPORATION |
专利号 | US6567443 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes |
英文摘要 | A self aligned, index-guided, buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures. The comparatively large p-contact area allowed by the self-aligned architecture contributes to a lower diode voltage and less heat during continuous wave operation of the laser diode. |
公开日期 | 2003-05-20 |
申请日期 | 1999-09-29 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/46083] |
专题 | 半导体激光器专利数据库 |
作者单位 | XEROX CORPORATION |
推荐引用方式 GB/T 7714 | BOUR, DAVID P.,KNEISSL, MICHAEL A.,ROMANO, LINDA T.,et al. Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes. US6567443. 2003-05-20. |
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