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	Ridge-structure DFB semiconductor laser and method of manufacturing the same
	TAKEI, KIYOSHI; CHEN, NONG; WATANABE, YOSHIAKI; CHIKUMA, KIYOFUMI
	2003-03-25
著作权人	PIONEER CORPORATION
专利号	US6537841
国家	美国
文献子类	授权发明
其他题名	Ridge-structure DFB semiconductor laser and method of manufacturing the same
英文摘要	A description is provided of a ridge-structure DFB semiconductor laser and a method of manufacturing the laser wherein an optical absorption loss by a metal electrode formed on a grating can be avoided. The DFB semiconductor laser includes: a ridge protruding from flat portions of a cladding layer which is formed on an active layer, the ridge includes a cladding layer and a contact layer sequentially formed on the active layer; a plurality of metal strips having a predetermined periodicity along a longitudinal direction of the ridge and extending from a surface of at least one of the flat portions to a top of the ridge; and an insulating layer formed on the plurality of metal strips at the top of the ridge.
公开日期	2003-03-25
申请日期	2002-01-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46059]
专题	半导体激光器专利数据库
作者单位	PIONEER CORPORATION
推荐引用方式 GB/T 7714	TAKEI, KIYOSHI,CHEN, NONG,WATANABE, YOSHIAKI,et al. Ridge-structure DFB semiconductor laser and method of manufacturing the same. US6537841. 2003-03-25.

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