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	Semiconductor laser manufacturing method and semiconductor laser
	NOZU, SHUNSUKE
	2013-12-03
著作权人	RENESAS ELECTRONICS CORPORATION
专利号	US8599894
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser manufacturing method and semiconductor laser
英文摘要	Provided are a semiconductor laser manufacturing method and a semiconductor laser with a low device resistance. First, an active layer is deposited above a GaN substrate of a first conductivity type. A first guide layer made of GaN of a second conductivity type is deposited above the active layer. An AlN layer is deposited on the first guide layer. An opening is formed in the AlN layer. A first cladding layer made of a group-III nitride semiconductor of the second conductivity type is formed on the AlN layer and the first guide layer exposed through the opening such that a first growth rate at a start of growth on the first guide layer exposed through the opening becomes greater than a second growth rate at a start of growth on the AlN layer. A contact layer of the second conductivity type is formed on the first cladding layer.
公开日期	2013-12-03
申请日期	2012-05-29
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46057]
专题	半导体激光器专利数据库
作者单位	RENESAS ELECTRONICS CORPORATION
推荐引用方式 GB/T 7714	NOZU, SHUNSUKE. Semiconductor laser manufacturing method and semiconductor laser. US8599894. 2013-12-03.

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