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	Strained quantum well laser for high temperature operation
	DERRY, PAMELA L.; HONG, CHI-SHAIN; CHAN, ERIC Y.; FIGUEROA, LUIS; FU, R. JENNHWA
	1993-02-23
著作权人	CURATORS OF THE UNIVERSITY OF MISSOURI, THE
专利号	US5189679
国家	美国
文献子类	授权发明
其他题名	Strained quantum well laser for high temperature operation
英文摘要	A semiconductor laser having increased reliability and enhanced high temperature operation. The device is based upon GaAs/AlGaAs, and comprises a quantum well active layer that is strained by the inclusion of the indium. The rear facet of the device has a high reflectivity coating, and the front facet reflectivity and cavity length are adjusted based upon the required output power. For high output power at high temperature, long cavity lengths and low front facet reflectivities are used. For low current operation and low output power at high temperature, shorter cavities and higher front facet reflectivities are used. The lasers are capable of reliably operating at temperatures up to and in excess of 100 DEG C.
公开日期	1993-02-23
申请日期	1991-09-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46036]
专题	半导体激光器专利数据库
作者单位	CURATORS OF THE UNIVERSITY OF MISSOURI, THE
推荐引用方式 GB/T 7714	DERRY, PAMELA L.,HONG, CHI-SHAIN,CHAN, ERIC Y.,et al. Strained quantum well laser for high temperature operation. US5189679. 1993-02-23.

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