Method of manufacturing a semiconductor device that uses a sapphire substrate | |
SASSA, MICHINARI; KOIDE, NORIKATSU | |
1997-05-06 | |
著作权人 | TOYODA GOSEI CO., LTD. |
专利号 | US5627109 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Method of manufacturing a semiconductor device that uses a sapphire substrate |
英文摘要 | A sapphire wafer is sliced off parallel to a plane "a" {11+E,ovs 2+EE 0} so that patterns on its top surface are rectangular in shape as defined by an axis "c" (0001) and an axis "m" (10+E,ovs 1+EE 0). The sapphire wafer is fixed on a table. A scriber blade that is coated with synthetic diamond scribes the surface of the sapphire wafer so that scribe lines are formed in a checkered pattern. One of the scribe lines is inclined from axis "c" (001) by 20 to 70 degrees in a clockwise direction and the other scribe line is inclined from the axis "c" (001) by 20 to 70 degrees in a counterclockwise direction. After scribing, pressure is applied by a roller along the scribe lines so as to cause the sapphire wafer to break into a sapphire chip. The yield of sapphire chips is increased by the use of this method because chipping is less likely to occur. |
公开日期 | 1997-05-06 |
申请日期 | 1995-09-15 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/46035] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | TOYODA GOSEI CO., LTD. |
推荐引用方式 GB/T 7714 | SASSA, MICHINARI,KOIDE, NORIKATSU. Method of manufacturing a semiconductor device that uses a sapphire substrate. US5627109. 1997-05-06. |
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