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	Method of manufacturing a semiconductor device that uses a sapphire substrate
	SASSA, MICHINARI; KOIDE, NORIKATSU
	1997-05-06
著作权人	TOYODA GOSEI CO., LTD.
专利号	US5627109
国家	美国
文献子类	授权发明
其他题名	Method of manufacturing a semiconductor device that uses a sapphire substrate
英文摘要	A sapphire wafer is sliced off parallel to a plane "a" {11+E,ovs 2+EE 0} so that patterns on its top surface are rectangular in shape as defined by an axis "c" (0001) and an axis "m" (10+E,ovs 1+EE 0). The sapphire wafer is fixed on a table. A scriber blade that is coated with synthetic diamond scribes the surface of the sapphire wafer so that scribe lines are formed in a checkered pattern. One of the scribe lines is inclined from axis "c" (001) by 20 to 70 degrees in a clockwise direction and the other scribe line is inclined from the axis "c" (001) by 20 to 70 degrees in a counterclockwise direction. After scribing, pressure is applied by a roller along the scribe lines so as to cause the sapphire wafer to break into a sapphire chip. The yield of sapphire chips is increased by the use of this method because chipping is less likely to occur.
公开日期	1997-05-06
申请日期	1995-09-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46035]
专题	半导体激光器专利数据库
作者单位	TOYODA GOSEI CO., LTD.
推荐引用方式 GB/T 7714	SASSA, MICHINARI,KOIDE, NORIKATSU. Method of manufacturing a semiconductor device that uses a sapphire substrate. US5627109. 1997-05-06.

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