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	Surface emitting semiconductor laser, and its fabrication method
	SATO, TAKAHIRO; SAKATA, HAJIME
	2003-10-28
著作权人	CANON KABUSHIKI KAISHA
专利号	US6639927
国家	美国
文献子类	授权发明
其他题名	Surface emitting semiconductor laser, and its fabrication method
英文摘要	A surface emitting semiconductor laser includes an active region formed on a growth substrate, upper and lower mirror layers that sandwich the active region to construct a vertical cavity, a selective oxidization layer, and a current injecting unit for injecting a current into the active region. The selective oxidization layer is selectively oxidized and insulated and is provided on the side of the active region opposite to the side of the substrate. In this structure, a post portion is formed by removing semiconductor material formed on the substrate down to an uppermost or halfway level of the selective oxidization layer while the selective oxidization layer is used as an etch stop layer, and the selective oxidization layer acts as both a current confinement layer for the current injection and an insulating layer for the current injecting unit.
公开日期	2003-10-28
申请日期	2000-12-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45926]
专题	半导体激光器专利数据库
作者单位	CANON KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	SATO, TAKAHIRO,SAKATA, HAJIME. Surface emitting semiconductor laser, and its fabrication method. US6639927. 2003-10-28.

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