Low-dimensional plasmon light emitting device | |
NAGAO, TADAAKI | |
2005-09-20 | |
著作权人 | JAPAN SCIENCE AND TECHNOLOGY CORPORATION |
专利号 | US6946674 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Low-dimensional plasmon light emitting device |
英文摘要 | A low-dimensional plasmon-light emitter for converting an inputted electric energy luminescence with an arbitrary energy over a broad range. The emitter has a low-dimensional conductive structure incorporated inside or in a surface layer of a semiconductor or dielectric. A periodic nanostructure is incorporated in the vicinity of or inside the low-dimensional conductive structure. The low-dimensional conductive structure may be a quantum well formed inside a semiconductor or dielectric, a space-charge layer formed on a surface or heterojunction of a semiconductor or dielectric, or a surface or interface electronic band with high carrier density formed on a surface or heterojunction of a semiconductor or dielectric. The periodic nanostructure is selected from a periodic structure formed by vapor-deposition or etching of fine metallic wires, a periodic structure of a film formed on surfaces with atomic steps, or a periodic structure self-organized during epitaxial growth or polymerization of an organic molecule or polymer. |
公开日期 | 2005-09-20 |
申请日期 | 2002-03-11 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/45900] |
专题 | 半导体激光器专利数据库 |
作者单位 | JAPAN SCIENCE AND TECHNOLOGY CORPORATION |
推荐引用方式 GB/T 7714 | NAGAO, TADAAKI. Low-dimensional plasmon light emitting device. US6946674. 2005-09-20. |
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