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	Method of manufacturing a semiconductor laser device and a crystal growth apparatus for use in a semiconductor laser device
	FUJII, HIROAKI; ENDO, KENJI
	2001-03-13
著作权人	RENESAS ELECTRONICS CORPORATION
专利号	US6200382
国家	美国
文献子类	授权发明
其他题名	Method of manufacturing a semiconductor laser device and a crystal growth apparatus for use in a semiconductor laser device
英文摘要	In a method of manufacturing a semiconductor laser device having a double hetero structure which is structured by at least a first clad layer, an active layer and a second clad layer on a semiconductor substrate by the use of the organic metal vapor growth method, crystal is grown in first atmosphere gas containing hydrogen in a temperature rising process. Subsequently, the first atmosphere gas is switched into second atmosphere gas in a temperature dropping process after the crystal growth. The second atmosphere gas contains no hydrogen.
公开日期	2001-03-13
申请日期	1999-07-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45891]
专题	半导体激光器专利数据库
作者单位	RENESAS ELECTRONICS CORPORATION
推荐引用方式 GB/T 7714	FUJII, HIROAKI,ENDO, KENJI. Method of manufacturing a semiconductor laser device and a crystal growth apparatus for use in a semiconductor laser device. US6200382. 2001-03-13.

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