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	化合物半導体単結晶エピタキシャル基板およびその成長方法
	山本 ▲ミツ▼夫; 山本 知生; 都築 信頼
	1996-12-05
著作权人	日本電信電話株式会社
专利号	JP2587150B2
国家	日本
文献子类	授权发明
其他题名	化合物半導体単結晶エピタキシャル基板およびその成長方法
英文摘要	PURPOSE:To enhance the stability and the yield by a method wherein the title compound semiconductor single crystal epitaxial substrate is composed of four element mixed crystal in specific composition and almost equal composition ratios of III group elements in a well layer and a barreir layer. CONSTITUTION:Supposing that x3=0.29, y3=0.63 in the composition of a barrier layer 5 represented by an expression, the composition ratios x of III group elements and the composition ratios y of V group elements in the well layer 4 having the compressive strain of about 1% are respectively to be x2=x3=0.29, y2=0.85 while not only the composition ratios x of the III group elements are equalized but also the difference between the well layer 4 and the barrier layer 5 in the composition ratios y of the V group elements is lessened. On the other hand, the mixed crystallization i.e., the cause of the mutual diffusion of the constituent elements between the well layer 4 and the barrier layer 5 can be attributed to the difference in the composition ratios making the mixed crystallization hardly occur thereby enabling the yield of laser element and the longtime reliability to be enhanced. Furtheremore, the multiquantum well structure can be easily grown by a simple method due to the equalized composition ratios x of III group elements in the well layer 4 and the barrier layer 5.
公开日期	1997-03-05
申请日期	1991-06-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45886]
专题	半导体激光器专利数据库
作者单位	日本電信電話株式会社
推荐引用方式 GB/T 7714	山本 ▲ミツ▼夫,山本 知生,都築 信頼. 化合物半導体単結晶エピタキシャル基板およびその成長方法. JP2587150B2. 1996-12-05.

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