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	Semiconductor laser with disordered and non-disordered quantum well regions
	SARGENT, EDWARD H.
	2003-07-15
著作权人	DAKOTA INVESTMENT GROUP, INC.
专利号	US6594295
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser with disordered and non-disordered quantum well regions
英文摘要	In a semiconductor laser, non-disordered quantum well active region functions as a lasing region. Surrounding the non-disordered quantum well active region is a disordered quantum well active region which prevents diffusion of injected carriers from the non-disordered quantum well active region or provides a lateral heterobarrier. The disordered quantum well active region is formed by rapid thermal annealing in which defects from one or two InP defect layers diffuse into the parts of the quantum well active region to be disordered.
公开日期	2003-07-15
申请日期	2001-11-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45849]
专题	半导体激光器专利数据库
作者单位	DAKOTA INVESTMENT GROUP, INC.
推荐引用方式 GB/T 7714	SARGENT, EDWARD H.. Semiconductor laser with disordered and non-disordered quantum well regions. US6594295. 2003-07-15.

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