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	Method of fabricating rare earth doped planar optical waveguide for integrated optical circuit
	TUMMINELLI, RICHARD P.
	1992-08-25
著作权人	CHARLES STARK DRAPER LABORATORY, THE
专利号	US5141549
国家	美国
文献子类	授权发明
其他题名	Method of fabricating rare earth doped planar optical waveguide for integrated optical circuit
英文摘要	A method of fabricating rare earth doped planar optical waveguides for integrated optical circuits includes introducing a first carrier gas to a heated column of rare earth chelate to create a flow of rare earth chelate vapor in the carrier; introducing a second carrier gas through a silicon precursor to create a flow of silicon precursor vapor in the carrier; submitting the flow of rare earth chelate vapor and the flow of silicon precursor vapor with oxygen and a homogenizing agent to a flame hydrolysis deposition burner to produce a soot of rare earth doped silica; and depositing the soot on a planar substrate; and etching the soot, after consolidation, to define one or more discrete channel waveguides.
公开日期	1992-08-25
申请日期	1991-05-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45846]
专题	半导体激光器专利数据库
作者单位	CHARLES STARK DRAPER LABORATORY, THE
推荐引用方式 GB/T 7714	TUMMINELLI, RICHARD P.. Method of fabricating rare earth doped planar optical waveguide for integrated optical circuit. US5141549. 1992-08-25.

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