QQ客服 官方微博 反馈留言

	半導体レ—ザ—
	関口 芳信; 池田 外充
	1996-07-25
著作权人	キヤノン株式会社
专利号	JP2543551B2
国家	日本
文献子类	授权发明
其他题名	半導体レ—ザ—
英文摘要	PURPOSE:To improve index waveguide characteristics without deteriorating characteristics by working damage, and to scale down a far-field patten by forming an optical guide layer to the upper section of an active layer in a ridge waveguide type semiconductor laser and executing mesa working up to a section near the optical guide layer. CONSTITUTION:An N type AlGaAs clad layer 10, an AlGaAs optical confinement layer 9, a multiple quantum well structure (MQW) active layer 8, an AlGaAs optical confinement layer 7, a P-type AlGaAs clad layer 6, an MQW optical guide layer 5, a P-type AlGaAs clad layer 4 and a P type GaAs cap layer 3 are shaped onto an N type GaAs substrate 12. The composition and thickness of each layer are brought so that light waves propagated through the active layer 9 and the optical guide layer 5 are coupled mutually. An SiO insulating film 2 and electrodes 1, 13 are applied after ridge working. Since a mesa working surface on the outside of a ridge is separated sufficiently from the active layer, damage at the time of working has no effect on the active layer. Since an index guide type is formed, astigmatism is removed, and an output can be increased.
公开日期	1996-10-16
申请日期	1987-12-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45838]
专题	半导体激光器专利数据库
作者单位	キヤノン株式会社
推荐引用方式 GB/T 7714	関口 芳信,池田 外充. 半導体レ—ザ—. JP2543551B2. 1996-07-25.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。