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	Tunable semiconductor diode laser with distributed reflection
	KUINDERSMA, PIETER I.; VAN DONGEN, TEUNIS
	1991-02-19
著作权人	JDS UNIPHASE CORPORATION
专利号	US4995048
国家	美国
文献子类	授权发明
其他题名	Tunable semiconductor diode laser with distributed reflection
英文摘要	A tunable semiconductor diode laser with distributed reflection (DBR semiconductor laser) having a wide wavelength range is a suitable transmitter or local oscillator in a receiver in heterodyne and coherent optical glass fiber communication systems. Such a diode includes, in addition to the Bragg section in which the Bragg reflection takes place, an active section in which the radiation-emitting active region is present. When such a semiconductor diode laser is further provided with a so-called phase section, tuning is possible over a large wavelength range within one oscillation mode. A laser which is continuously tunable over the whole wavelength range is obtained by provided a mechanism by which the intensity of radiation which is reflected at the junction between the active section and the phase section is made low with respect to the intensity of the radiation which returns from the phase section to the active section.
公开日期	1991-02-19
申请日期	1989-12-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45733]
专题	半导体激光器专利数据库
作者单位	JDS UNIPHASE CORPORATION
推荐引用方式 GB/T 7714	KUINDERSMA, PIETER I.,VAN DONGEN, TEUNIS. Tunable semiconductor diode laser with distributed reflection. US4995048. 1991-02-19.

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