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	Light emitting device having current blocking structure
	SAKATA, YASUTAKA
	1998-12-08
著作权人	RENESAS ELECTRONICS CORPORATION
专利号	US5847415
国家	美国
文献子类	授权发明
其他题名	Light emitting device having current blocking structure
英文摘要	A pair of SiO2 stripe masks are formed on a p-InP substrate (31) with a separation of 5 mu m in [011] direction and an optical waveguide including a p-InP clad layer (32), an active layer (33) and an n-InP clad layer (34) is formed on the p-InP substrate (31) at the 5 mu m exposed area according to MOVPE selective growth process. Both sides of the optical waveguide are buried with pnpn current blocking structure according to the MOVPE selective growth, wherein a p-InP layer (36) and n-InP layer (37) are formed, then a surface of the n-InP layer (37) is inverted to p-type to form a p-InP inversion layer (38) according to Zn open tube diffusion process carried out in MOVPE system, thereby the interconnection between the n-InP layer (37) and the n-InP clad layer (34) is prevented, and then a p-InP layer (39) and n-InP layer (40) are formed. An n-InP layer (41) is formed thereon.
公开日期	1998-12-08
申请日期	1996-04-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45711]
专题	半导体激光器专利数据库
作者单位	RENESAS ELECTRONICS CORPORATION
推荐引用方式 GB/T 7714	SAKATA, YASUTAKA. Light emitting device having current blocking structure. US5847415. 1998-12-08.

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