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	半導体レーザ装置又は光導波路およびその製造方法
	大塚 信之; 石野 正人; 松井 康
	1999-08-27
著作权人	松下電器産業株式会社
专利号	JP2969939B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ装置又は光導波路およびその製造方法
英文摘要	PURPOSE:To realize a semiconductor laser having a low threshold value necessary for an optical fiber communication, etc., or an optical waveguide having large optical amplification by providing the laser or the waveguide having a strain well layer in which inactive or optical amplification impurity is added. CONSTITUTION:A current introduced from a p-type side electrode 11 is narrowed by a current block layer 8, then concentrated at an active layer region 9, and injected to a distortion quantum well 5. The well 5 is formed in a 3-layer structure of a barrier layer 3 and a well layer 4, and carbon atoms are added to the layer 4. An Auger effect is suppressed by a strain effect in the well to reduce a threshold current. After a light emitting element, an optical switch, a photodetector, etc., are monolithically integrated on an InP board 11, and a distortion quantum well optical waveguide having high optical amplification is formed to optically wire between the devices. A propagation mode can be regulated to an optimum value, and an optical amplification is provided.
公开日期	1999-11-02
申请日期	1990-11-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45687]
专题	半导体激光器专利数据库
作者单位	松下電器産業株式会社
推荐引用方式 GB/T 7714	大塚 信之,石野 正人,松井 康. 半導体レーザ装置又は光導波路およびその製造方法. JP2969939B2. 1999-08-27.

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