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	Semiconductor light source and method of fabrication thereof
	GROOM, KRISTIAN; HOGG, RICHARD
	2014-02-25
著作权人	THE UNIVERSITY OF SHEFFIELD
专利号	US8659038
国家	美国
文献子类	授权发明
其他题名	Semiconductor light source and method of fabrication thereof
英文摘要	Embodiments of the present invention provided a method of fabricating a semiconductor light source structure. The method comprises providing a GaAs substrate; forming a lower cladding layer above the substrate, the lower cladding layer comprising an AIxGa1-xAs alloy; forming an active region above the lower cladding layer, the active region comprising a GaAs separate confinement heterostructure; and forming an upper cladding layer comprising an AIxGa1-xAs alloy above the active region in the form of an elongate stripe bounded on either side by an InGaP current-blocking layer, the elongate stripe defining an index-guided optical waveguide. The stripe is formed such that at least one free end of the stripe is spaced apart from an edge of the substrate in a direction parallel to a longitudinal axis of the stripe such that a portion of the lower cladding layer, active region, current blocking layer and upper cladding layer extend beyond the at least one free end of the stripe thereby to provide an unpumped and laterally unguided window region.
公开日期	2014-02-25
申请日期	2010-06-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44721]
专题	半导体激光器专利数据库
作者单位	THE UNIVERSITY OF SHEFFIELD
推荐引用方式 GB/T 7714	GROOM, KRISTIAN,HOGG, RICHARD. Semiconductor light source and method of fabrication thereof. US8659038. 2014-02-25.

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