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	Semiconductor laser having low stress passivation layer
	SUDO, TSURUGI; VERMA, ASHISH; CHAI, JING; THIYAGARAJAN, SUMESH MANI K.
	2009-07-28
著作权人	FINISAR CORPORATION
专利号	US7567601
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser having low stress passivation layer
英文摘要	A laser diode having a composite passivation layer configured to control parasitic capacitance, especially in high speed laser applications, is disclosed. In one embodiment, a ridge waveguide laser is disclosed and includes: a substrate, an active layer disposed on the substrate, a ridge structure disposed on the active layer, and a contact layer disposed on the ridge structure. A composite passivation layer is disposed substantially laterally to the ridge structure. The composite passivation layer includes a silicon nitride bottom layer, a silicon nitride top layer, and a silicon dioxide middle layer interposed between the bottom and top layers. The passivation layers possess differing stress components that, when combined, cancel out the overall mechanical stress of the passivation layer. This enables relatively thick passivation layers to be employed in high speed laser diodes without increasing the risk of layer stress cracking and laser damage.
公开日期	2009-07-28
申请日期	2007-05-15
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44611]
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	SUDO, TSURUGI,VERMA, ASHISH,CHAI, JING,et al. Semiconductor laser having low stress passivation layer. US7567601. 2009-07-28.

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