| Phased array semiconductor laser | |
| JEWELL, JACK L.; OLBRIGHT, GREG R. | |
| 1995-08-29 | |
| 著作权人 | MOSS, JEROME S. |
| 专利号 | US5446754 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Phased array semiconductor laser |
| 英文摘要 | A phased array of semiconductor laser elements is provided in which the percentage of light which propagates into different diffractive orders is modified by an optical element. The diode laser includes a body of a semiconductor material having an active region therein which is adapted to generate radiation and emit the radiation form a surface of the body, and separate reflecting mirrors at opposite sides of the active region with at least one of the mirrors being partially transparent to the generated light to allow the light generated in the active region to be emitted therethrough. The optical element may take the form of a modification in the arrangement of the semiconductor laser elements, or an array of microprisms, or an external mirror to modify the percentage of light which propagates into different diffractive orders. |
| 公开日期 | 1995-08-29 |
| 申请日期 | 1993-11-05 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44583]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MOSS, JEROME S. |
| 推荐引用方式 GB/T 7714 | JEWELL, JACK L.,OLBRIGHT, GREG R.. Phased array semiconductor laser. US5446754. 1995-08-29. |
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