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	Fast polarization-switchable semiconductor lasers
	LIU, JIA-MING; CHEN, YING-CHIH
	1986-09-16
著作权人	GTE LABORATORIES INCORPORATED, A DE CORP.
专利号	US4612645
国家	美国
文献子类	授权发明
其他题名	Fast polarization-switchable semiconductor lasers
英文摘要	The laser device of the present invention comprises: a semiconductor substrate; a first cladding layer of semiconductor formed on the substrate; an active layer of semiconductor formed on the first cladding layer, thereby forming a junction plane between the active layer and the first cladding layer; a second cladding layer of semiconductor formed on the active layer and a cap layer of semiconductor formed on the second cladding layer; the active layer having a lattice constant parallel to the junction plane sufficiently larger than the lattice constant normal to the junction plane so as to increase the optical gain of the TM mode relative to the optical gain of the normally operating TE mode, such that at a first injection current level, the laser device operates in the TM mode and at a second injection current level, the laser device operates in the TE mode. The laser output of the laser device of the present invention can be switched between a pure TM mode and a pure TE mode with nanosecond response time by varying injection current levels of the device.
公开日期	1986-09-16
申请日期	1984-12-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44493]
专题	半导体激光器专利数据库
作者单位	GTE LABORATORIES INCORPORATED, A DE CORP.
推荐引用方式 GB/T 7714	LIU, JIA-MING,CHEN, YING-CHIH. Fast polarization-switchable semiconductor lasers. US4612645. 1986-09-16.

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