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	Non-regrowth distributed feedback ridge semiconductor laser and method of manufacturing the same
	CHEN, NONG; WATANABE, YOSHIAKI; TAKEI, KOYOSHI; CHIKUMA, KIYOFUMI
	1999-11-09
著作权人	PIONEER ELECTRONIC CORPORATION
专利号	US5982804
国家	美国
文献子类	授权发明
其他题名	Non-regrowth distributed feedback ridge semiconductor laser and method of manufacturing the same
英文摘要	There is provided a method of manufacturing a DFB semiconductor laser in which a laser substrate having a cladding layer which is a material for a ridge stripe stacked on an active is formed. The cladding layer as a material for a ridge stripe is etched to form a ridge stripe having flat portions on both sides thereof and a flat top portion protruding therefrom. A protective film and a resist layer are formed to cover the flat portions on both sides and the flat upper surface. A latent image of a grating having a periodic structure is formed in the direction in which the ridge stripe extends is formed on the resist layer. The resist layer is developed and the flat portions on both sides are etched to form a grating on both lateral portions and to remove the protective film. An electrode is formed on the flat top portion, the interface between the ridge strip and the electrode being a smooth surface.
公开日期	1999-11-09
申请日期	1997-07-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44474]
专题	半导体激光器专利数据库
作者单位	PIONEER ELECTRONIC CORPORATION
推荐引用方式 GB/T 7714	CHEN, NONG,WATANABE, YOSHIAKI,TAKEI, KOYOSHI,et al. Non-regrowth distributed feedback ridge semiconductor laser and method of manufacturing the same. US5982804. 1999-11-09.

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