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	Monolithic semiconductor laser
	TANABE, TETSUHIRO
	2011-06-21
著作权人	ROHM CO., LTD.
专利号	US7965753
国家	美国
文献子类	授权发明
其他题名	Monolithic semiconductor laser
英文摘要	An infrared element (10a) which includes at least a light emitting layer forming portion (9a) composed of, for example, a first conductivity type cladding layer (2a), an active layer (3a), and a second conductivity type cladding layer (4a) for emitting infrared light, is formed on a semiconductor substrate (1), and a red element (10b) which includes at least a light emitting layer forming portion (9b) composed of, for example, a first conductivity type cladding layer (2b), an active layer (3b), and a second conductivity type cladding layer (4b) for emitting red light, is formed on the same semiconductor substrate (1). And their second conductivity type cladding layers (4a and 4b) are made of the same material. As a result, forming process of their ridge portions may be communized and both of the elements can be formed respectively, with a window structure capable of high output operation.
公开日期	2011-06-21
申请日期	2006-08-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44451]
专题	半导体激光器专利数据库
作者单位	ROHM CO., LTD.
推荐引用方式 GB/T 7714	TANABE, TETSUHIRO. Monolithic semiconductor laser. US7965753. 2011-06-21.

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