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	Compound semiconductor element and its manufacturing method
	YUGE, SHOZO
	2001-10-30
著作权人	KABUSHIKI KAISHA TOSHIBA
专利号	US6309459
国家	美国
文献子类	授权发明
其他题名	Compound semiconductor element and its manufacturing method
英文摘要	A compound semiconductor light emitting element has a unique SCH structure having InGaN graded layers with a gradiunt in content of In interposed between an InGaN active layer and AlGaN cladding layers to ensure a good crystallographic property of the active layer, to maintain and hetero interfaces on and above the active layer in a good condition and to prevent fluctuation in thickness of the active layer, so that a compound semiconductor light emitting element with a high emission efficiency and reliability or a laser element with a high slope efficiency and reliability be obtained. The InGaN graded layers with gradually changed In compositions can be made by increasing or decreasing the temperature while maintaining the supply amount or the ratio of the In source material relative to the supply amount of the other group III source materials in a constant value.
公开日期	2001-10-30
申请日期	2000-07-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44438]
专题	半导体激光器专利数据库
作者单位	KABUSHIKI KAISHA TOSHIBA
推荐引用方式 GB/T 7714	YUGE, SHOZO. Compound semiconductor element and its manufacturing method. US6309459. 2001-10-30.

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