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	Quantum cascade semiconductor laser
	HASHIMOTO, JUN-ICHI; KATO, TAKASHI; INADA, HIROSHI; MURATA, MICHIO
	2014-08-12
著作权人	SUMITOMO ELECTRIC INDUSTRIES, LTD.
专利号	US8804785
国家	美国
文献子类	授权发明
其他题名	Quantum cascade semiconductor laser
英文摘要	A quantum cascade semiconductor laser includes a n-type semiconductor substrate, the substrate having a main surface; a mesa waveguide disposed on the substrate, the mesa waveguide including a core layer and an n-type upper cladding layer disposed on the core layer; a first semiconductor layer disposed on a side surface of the mesa waveguide and the main surface of the substrate, the first semiconductor layer being in contact with the side surface of the mesa waveguide; and a second semiconductor layer disposed on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer constitute a burying region embedding the side surfaces of the mesa waveguide. The first semiconductor layer is formed of at least one of a semi-insulating semiconductor and a p-type semiconductor. In addition, the second semiconductor layer is formed of an n-type semiconductor.
公开日期	2014-08-12
申请日期	2013-05-31
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44437]
专题	半导体激光器专利数据库
作者单位	SUMITOMO ELECTRIC INDUSTRIES, LTD.
推荐引用方式 GB/T 7714	HASHIMOTO, JUN-ICHI,KATO, TAKASHI,INADA, HIROSHI,et al. Quantum cascade semiconductor laser. US8804785. 2014-08-12.

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