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	Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
	SCHETZINA, JAN FREDERICK
	1998-10-06
著作权人	NORTH CAROLINA STATE UNIVERSITY OF RALEIGH
专利号	US5818072
国家	美国
文献子类	授权发明
其他题名	Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
英文摘要	An ohmic contact to a p-type zinc selenide (ZnSe) layer in a Group II-VI semiconductor device, includes a zinc mercury selenide (ZnxHg1-xSe) layer on the zinc selenide layer, a mercury selenide (HgSe) layer on the zinc mercury selenide layer and a conductor (such as metal) layer on the mercury selenide layer. The zinc mercury selenide and mercury selenide layers between the p-type zinc selenide and the conductor layer provide an ohmic contact by eliminating the band offset between the wide bandgap zinc selenide and the conductor. Step graded, linear graded, and parabolic graded layers of zinc mercury selenide may be provided. A layer of mercury selenide without the mercury zinc selenide layer may also provide an ohmic contact. The ohmic contact of the present invention produces nearly ideal voltage-current relation, so that high efficiency Group II-VI optoelectronic devices may be obtained. The integrated heterostructure is formed by epitaxially depositing the ohmic contact on the Group II-VI device. A removable overcoat layer may be formed on the Group II-VI device to allow room temperature atmospheric pressure transfer of the device from a zinc based deposition chamber to a mercury based deposition chamber, for deposition of the ohmic contact.
公开日期	1998-10-06
申请日期	1992-05-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44426]
专题	半导体激光器专利数据库
作者单位	NORTH CAROLINA STATE UNIVERSITY OF RALEIGH
推荐引用方式 GB/T 7714	SCHETZINA, JAN FREDERICK. Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same. US5818072. 1998-10-06.

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