Phased array semiconductor lasers fabricated from impurity induced disordering | |
BURNHAM, ROBERT D.; THORNTON, ROBERT L. | |
1988-02-23 | |
著作权人 | XEROX CORPORATION, STAMFORD, FAIRFIELD, CONNECTICUT, A CORP OF NEW YORK |
专利号 | US4727557 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Phased array semiconductor lasers fabricated from impurity induced disordering |
英文摘要 | Phased array semiconductor lasers provide fundamental or preferred 1st supermode operation wherein fabrication is accomplished by a single, continuous fabricating process, e.g. MO-CVD or MBE, followed by impurity induced disordering (IID), e.g. utilization of the impurity diffusion technique or the implant/anneal technique as now known in the art. The laser comprising this invention is provided with a relatively thin active region or with a single or multiple quantum well structure in the active region and is fabricated by forming spatially disposed impurity induced disordering regions extending into or penetrating through the active region to form spatially disposed regions capable of providing higher gain compared to adjacent regions not experiencing impurity induced disordering. The adjacent regions without impurity induced disordering contain unspoiled regions that provide high real index waveguiding compared to the adjacent disordered regions with the diffusions in the disordered regions have higher conductivity properties compared to the remaining ordered regions and are, therefore, more efficiently pumped electrically. As a result, disordered regions form alternating higher gain regions offset between regions of nondisordered waveguide regions having higher real index waveguiding properties but lower gain properties, thereby fulfilling the conditions necessary to provide fundamental or preferred 1st supermode operation. |
公开日期 | 1988-02-23 |
申请日期 | 1985-12-30 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/44393] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | XEROX CORPORATION, STAMFORD, FAIRFIELD, CONNECTICUT, A CORP OF NEW YORK |
推荐引用方式 GB/T 7714 | BURNHAM, ROBERT D.,THORNTON, ROBERT L.. Phased array semiconductor lasers fabricated from impurity induced disordering. US4727557. 1988-02-23. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论