QQ客服 官方微博 反馈留言

	Light emitting semiconductor device having an electrical confinement barrier near the active region
	JOHNSON, RALPH H.; BIARD, JAMES R.; GUENTER, JAMES K.
	2011-04-05
著作权人	FINISAR CORPORATION
专利号	US7920612
国家	美国
文献子类	授权发明
其他题名	Light emitting semiconductor device having an electrical confinement barrier near the active region
英文摘要	Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.
公开日期	2011-04-05
申请日期	2006-07-31
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44315]
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	JOHNSON, RALPH H.,BIARD, JAMES R.,GUENTER, JAMES K.. Light emitting semiconductor device having an electrical confinement barrier near the active region. US7920612. 2011-04-05.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。