| Nitride semiconductor laser device and method for fabricating the same | |
| TAMURA, SATOSHI; IKEDO, NORIO | |
| 著作权人 | PANASONIC CORPORATION |
| 专利号 | US20070195843A1 |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride semiconductor laser device and method for fabricating the same |
| 英文摘要 | A nitride semiconductor laser device has a buried type structure including an active layer sandwiched between an n-type cladding layer and a p-type cladding layer; and a current blocking layer having an opening for confining a current flowing to the active layer. In the buried type structure, a regrown layer made of a nitride semiconductor layer including In (such as an InGaN layer or an AlInGaN layer) and doped with a p-type impurity is formed on the current blocking layer so as to cover the opening of the current blocking layer. |
| 公开日期 | 2007-08-23 |
| 申请日期 | 2006-12-13 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44016]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PANASONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | TAMURA, SATOSHI,IKEDO, NORIO. Nitride semiconductor laser device and method for fabricating the same. US20070195843A1. |
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