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	Semiconductor light amplifier
	KOTAKI YUJI; ISHIKAWA HIROSHI; SODA HARUHISA
著作权人	FUJITSU LTD
专利号	JP1991274530A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light amplifier
英文摘要	PURPOSE:To efficiently and uniformly excite along a light amplification layer irrespective of the size of the light amplification layer and to obtain a light amplifier of high gain by finding out a method for exciting the light amplification layer by light and providing an amplifier in a resonator of laser for excitation. CONSTITUTION:The amplifier is constituted of the light amplification layer(band gap wavelength lambdaa) 1 in a striped state constituted of non-doped semiconductor formed on one surface of a lower clad layer (lambdacl) 3 constituted of, for example, an n type semiconductor, an activation layer for excitation light (lambdap) 2 formed on both sides of the layer 1 in the extending direction of the layer 1 and an upper clad layer (lambdac2) 4 constituted of a p type semiconductor formed on the light amplification layer 1 and the activation layer for the excitation light 2. Since lambdaa>=lambdain>lambdap>lambdacl,lambdac2 is satisfied in the relation between the band gap wavelength of respective layers and the wavelength lambdain of the light made incident on the end side of the light amplification layer 1, the incident light travels in the light amplification layer 1 as the wave guide and then the light is emitted from the other end side. Thus, the voltage drop in the clad layer is reduced and a reactive current flowing in a buried layer is eliminated, so that the light amplification of high gain can be accomplished.
公开日期	1991-12-05
申请日期	1990-03-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/43702]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	KOTAKI YUJI,ISHIKAWA HIROSHI,SODA HARUHISA. Semiconductor light amplifier. JP1991274530A.

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