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	Buried Heterostructure Device Having Integrated Waveguide Grating Fabricated By Single Step MOCVD
	BOUR, DAVID P.; CORZINE, SCOTT W.
著作权人	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
专利号	US20090068778A1
国家	美国
文献子类	发明申请
其他题名	Buried Heterostructure Device Having Integrated Waveguide Grating Fabricated By Single Step MOCVD
英文摘要	The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.
公开日期	2009-03-12
申请日期	2008-09-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/43578]
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
推荐引用方式 GB/T 7714	BOUR, DAVID P.,CORZINE, SCOTT W.. Buried Heterostructure Device Having Integrated Waveguide Grating Fabricated By Single Step MOCVD. US20090068778A1.

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