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	Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system
	KURAMOTO, MASARU
著作权人	SONY CORPORATION
专利号	US20080117945A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system
英文摘要	A semiconductor laser using a nitride type Group III-V compound semiconductor includes: an n-side clad layer; an n-side optical waveguide layer over the n-side clad layer; an active layer over the n-side optical waveguide layer; a p-side optical waveguide layer over the active layer; an electron barrier layer over the p-side optical waveguide layer; and a p-side clad layer over the electron barrier layer. A ridge stripe is formed at an upper part of the p-side optical waveguide layer, the electron barrier layer and the p-side clad layer, and the distance between the electron barrier layer and a bottom surface in areas on both sides of the ridge stripe is not less than 10 nm.
公开日期	2008-05-22
申请日期	2007-11-07
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/43564]
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	KURAMOTO, MASARU. Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system. US20080117945A1.

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