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	Semiconductor light emitting device and manufacturing method therefor
	KAMETANI, EIJI; INOGUCHI, YUKARI; WATANABE, NOBUYUKI; MURAKAMI, TETSUROH
著作权人	XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
专利号	US20070007543A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor light emitting device and manufacturing method therefor
英文摘要	A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layer 30 including an AlGaInP active layer and a second wafer 23 which transmits light derived from the active layer. The crystal axes of the epitaxial layer 30 and the second wafer 23 are generally aligned with each other and are in the range of −15° to +15° with respect to a lateral face {100} of the second wafer 23. This semiconductor light emitting device, which is a joining type with high external emission efficiency, allows uniform wafer bonding to be achieved over the entire wafer face with ease and with a high yield without causing bonding failure and wafer cracks.
公开日期	2007-01-11
申请日期	2006-06-30
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/43532]
专题	半导体激光器专利数据库
作者单位	XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
推荐引用方式 GB/T 7714	KAMETANI, EIJI,INOGUCHI, YUKARI,WATANABE, NOBUYUKI,et al. Semiconductor light emitting device and manufacturing method therefor. US20070007543A1.

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