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	Surface-emitting semiconductor laser comprising a structured waveguide
	ORTSIEFER, MARKUS
著作权人	VERTILAS GMBH
专利号	US20060249738A1
国家	美国
文献子类	发明申请
其他题名	Surface-emitting semiconductor laser comprising a structured waveguide
英文摘要	A surface-emitting semiconductor laser includes an active zone, the active zone having a p-n-junction and surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor layer; a tunnel contact layer on the p-side of the active zone; an n-doped current-carrying layer that covers the tunnel contact layer, the n-doped current-carrying layer comprising a raised portion; and a structured layer having an optical thickness at least equal to the optical thickness of the current-carrying layer in the region of the raised portion, wherein the structured layer is disposed on the current-carrying layer within a maximum distance of 2 μm from the raised portion.
公开日期	2006-11-09
申请日期	2006-04-11
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/43526]
专题	半导体激光器专利数据库
作者单位	VERTILAS GMBH
推荐引用方式 GB/T 7714	ORTSIEFER, MARKUS. Surface-emitting semiconductor laser comprising a structured waveguide. US20060249738A1.

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