QQ客服 官方微博 反馈留言

	Method for lift off GaN pseudomask epitaxy layer using wafer bonding way
	WU, YEW-CHUNG; LIN, PEI-YEN; PENG, HSIEN-CHIH
著作权人	NATIONAL CHIAO TUNG UNIVERSITY
专利号	US20050186757A1
国家	美国
文献子类	发明申请
其他题名	Method for lift off GaN pseudomask epitaxy layer using wafer bonding way
英文摘要	The epitaxial lateral overgrowth (ELOG) GaN obtains the dangling structure by using wet etching and the transferred substrate to separate from the GaN epitaxy layer by using stress concentration of thermal expansion coefficient of the transferred substrate. It is useful to separate of the GaN epitaxy layer and transferred substrate by using anneal of wafer bonding. The present invention is to provide high selective etching rate, no damage to epitaxial film, low cost, and feasibility for larger commercial sizes. The wet etching method can not damage the separated epitaxial substrate, thus the substrate can be reused. There are various choices of handling substrate for bonding, not limited by the epitaxial method. When the epitaxial film is applied in devices, the low defect density of the epitaxial film can enhance the lifetime and efficiency of the devices. The addition of this improved fabrication process does not require expensive equipment. Moreover, it will reduce the production cost. The epitaxy substrate is a recyclable substrate after separation of wet etching method and the transferred epitaxy layer obtain low defect density, lifetime improvement and low cost.
公开日期	2005-08-25
申请日期	2004-02-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/43479]
专题	半导体激光器专利数据库
作者单位	NATIONAL CHIAO TUNG UNIVERSITY
推荐引用方式 GB/T 7714	WU, YEW-CHUNG,LIN, PEI-YEN,PENG, HSIEN-CHIH. Method for lift off GaN pseudomask epitaxy layer using wafer bonding way. US20050186757A1.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。