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	Method of fabricating a light emitting device, and light emitting device
	SHINOHARA, MASAYUKI; YAMADA, MASATO
著作权人	SHIN-ETSU HANDOTAI CO., LTD.
专利号	US20040023426A1
国家	美国
文献子类	发明申请
其他题名	Method of fabricating a light emitting device, and light emitting device
英文摘要	In the fabricating of a light emitting device, a light emitting layer portion 24 and a current spreading layer 7, respectively composed of a Group III-V compound semiconductor, are stacked on a single crystal substrate. The light emitting layer portion 24 is formed by a metal organic vapor-phase epitaxy process, and the current spreading layer 7, on such light emitting layer portion 24, is formed to have conductivity type of n-type by a hydride vapor-phase epitaxy process.
公开日期	2004-02-05
申请日期	2003-07-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/43463]
专题	半导体激光器专利数据库
作者单位	SHIN-ETSU HANDOTAI CO., LTD.
推荐引用方式 GB/T 7714	SHINOHARA, MASAYUKI,YAMADA, MASATO. Method of fabricating a light emitting device, and light emitting device. US20040023426A1.

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