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	Method of fabricating a light emitting device and light emitting device
	SHINOHARA, MASAYUKI; YAMADA, MASATO
著作权人	SHIN-ETSU HANDOTAI, CO., LTD.
专利号	US20030219918A1
国家	美国
文献子类	发明申请
其他题名	Method of fabricating a light emitting device and light emitting device
英文摘要	In the light emitting device having, a light emitting layer portion and a current spreading layer, respectively composed of a Group III-V compound semiconductor, formed on a single crystal substrate, the light emitting layer portion is formed on the single crystal substrate by the metal organic vapor-phase epitaxy process, and on such light emitting layer portion the current spreading layer is formed by the hydride vapor-phase epitaxy process. A high-concentration doped layer is also formed in a surficial area including the main surface on the electrode forming side of the current spreading layer, so as to have a carrier concentration of p-type dopant higher than that in the residual portion of the current spreading layer. A current blocking layer which comprises a Group III-V compound semiconductor having a conductivity type different from that of the current spreading layer is formed in the midway in the thickness-wise direction of the current spreading layer as being buried therein At least a portion of the current spreading layer covering the current blocking layer on the electrode side is formed by the hydride vapor-phase epitaxy process (the second vapor-phase growth step). The current spreading layer is composed of GaAs1-aPa (0.5<=a<=0.9). An off-angled substrate is available as the single crystal substrate.
公开日期	2003-11-27
申请日期	2003-05-13
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/43454]
专题	半导体激光器专利数据库
作者单位	SHIN-ETSU HANDOTAI, CO., LTD.
推荐引用方式 GB/T 7714	SHINOHARA, MASAYUKI,YAMADA, MASATO. Method of fabricating a light emitting device and light emitting device. US20030219918A1.

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